A high speed SiGe VCO based on self injection locking scheme
Editorial
10.22099/ijste.2007.857
Abstract
This paper discusses the design and implementation of an inductorless differential VCO with a maximum oscillation frequency of 20 GHz, in a 47 GHz SiGe process technology. The VCO is based on afull-wave rectification frequency-doubling technique, applied to a half rate differential single-stage feedback oscillator. It also benefits from a new circuit phenomenon named hereinafter Self Injection Locking (SIL). The implemented VCO has an area of 0.5 mm2 and features a remarkably high ratio of VCO frequency to process fT. Based on measurement results, the VCO consumes a DC power of less than 165 mW and exhibits a phase noise of -96 dBc/Hz at 1 MHz offset
(2007). A high speed SiGe VCO based on self injection locking scheme. Iranian Journal of Science and Technology Transactions of Electrical Engineering, 31(6), 641-650. doi: 10.22099/ijste.2007.857
MLA
. "A high speed SiGe VCO based on self injection locking scheme", Iranian Journal of Science and Technology Transactions of Electrical Engineering, 31, 6, 2007, 641-650. doi: 10.22099/ijste.2007.857
HARVARD
(2007). 'A high speed SiGe VCO based on self injection locking scheme', Iranian Journal of Science and Technology Transactions of Electrical Engineering, 31(6), pp. 641-650. doi: 10.22099/ijste.2007.857
VANCOUVER
A high speed SiGe VCO based on self injection locking scheme. Iranian Journal of Science and Technology Transactions of Electrical Engineering, 2007; 31(6): 641-650. doi: 10.22099/ijste.2007.857
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